PDIP N-CH 10.6V
GENERAL DESCRIPTION
ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are members of the EPAD® Matched Pair MOSFET Family.
FEATURES
• Precision zero threshold voltage mode
• Nominal RDSON@VGS=0.00V of 104KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• VGSth match VOS to 2mV and 10mV max.
• Positive, zero, and negative VGSthtempco
• Low input capacitance
• Low input/output leakage currents
通道数 4
漏源极电阻 500 Ω
极性 N-Channel
耗散功率 500 mW
阈值电压 10 mV
漏源极电压Vds 10.6 V
漏源击穿电压 10.0 V
栅源击穿电压 10.6 V
连续漏极电流Ids 12.0 mA
输入电容Ciss 2.5pF @5VVds
额定功率Max 500 mW
工作温度Max 70 ℃
工作温度Min 0 ℃
安装方式 Through Hole
封装 DIP-16
封装 DIP-16
工作温度 0℃ ~ 70℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free