AOK50B60D1

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AOK50B60D1概述

Trans IGBT Chip N-CH 600V 100A 312000mW 3Pin3+Tab TO-247 Tube

This fast-switching IGBT transistor from Alpha & Omega Semiconductor will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 312000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

AOK50B60D1中文资料参数规格
技术参数

额定功率 312 W

耗散功率 312000 mW

击穿电压集电极-发射极 600 V

反向恢复时间 132 ns

额定功率Max 312 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 312000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买AOK50B60D1
型号: AOK50B60D1
制造商: Alpha & Omega Semiconductor 万代半导体
描述:Trans IGBT Chip N-CH 600V 100A 312000mW 3Pin3+Tab TO-247 Tube

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