AON6932A

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AON6932A概述

DFN N-CH 30V 28A/42A

Mosfet Array 2 N-Channel Half Bridge 30V 22A, 36A 3.6W, 4.3W Surface Mount 8-DFN 5x6


得捷:
MOSFET 2N-CH 30V 22A/36A 8DFN


艾睿:
Create an effective common drain amplifier using this AON6932A power MOSFET from Alpha &a; Omega Semiconductor. Its maximum power dissipation is 31000@Q 1|78000@Q 2 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with alphamos technology.


TME:
Transistor: N-MOSFET x2; unipolar; 30V; 33A; 31W; DFN8


Verical:
Trans MOSFET N-CH 30V 28A/42A 8-Pin DFN-B EP


Win Source:
MOSFET 2N-CH 30V 22A/36A 8DFN


AON6932A中文资料参数规格
技术参数

额定功率 31 W

极性 N-CH

漏源极电压Vds 30 V

连续漏极电流Ids 28A/42A

输入电容Ciss 1037pF @15VVds

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 3.6 W

封装参数

安装方式 Surface Mount

引脚数 8

封装 DFN-8

外形尺寸

封装 DFN-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买AON6932A
型号: AON6932A
制造商: Alpha & Omega Semiconductor 万代半导体
描述:DFN N-CH 30V 28A/42A

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