RF Power Transistor,850 to 960MHz, 220W, Typ Gain in dB is 19.5 @ 920MHz, 28V, LDMOS, SOT1823
Overview
The 54 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 850 to 960 MHz.
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## Features
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* RoHS Compliant
## Features RF Performance Tables
### 900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 54 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
920 MHz| 19.5| 35.8| 7.0| –36.7| –13
940 MHz| 19.3| 35.4| 7.0| –36.8| –12
960 MHz| 19.0| 35.3| 7.0| –36.9| –12
### 880 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 54 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
865 MHz| 20.3| 35.8| 7.0| –36.2| –14
880 MHz| 20.1| 35.8| 7.0| –36.5| –14
895 MHz| 19.7| 35.5| 7.0| –36.0| –11