AFT05MS006NT1

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AFT05MS006NT1概述

晶体管, 射频FET, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W

Overview

The is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

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## Features

* Characterized for Operation from 136 to 941 MHz

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Integrated ESD Protection

* Integrated Stability Enhancements

* Wideband — Full Power Across the Band

* Exceptional Thermal Performance

* Extreme Ruggedness

* High Linearity for: TETRA, SSB

* RoHS Compliant

* In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

**Typical Applications**

* Output Stage VHF Band Handheld Radio

* Output Stage UHF Band Handheld Radio

* Output Stage for 700-800 MHz Handheld Radio

## Features RF Performance Tables

### Narrowband Performance

7.5 Vdc, IDQ = 100 mA, TA = 25°C, CW
.
*Frequency
MHz
.
* | **Gps
dB
.
* | **ηD
%
.
* | **Pout
W
.
*

\---|---|---|---

5201| 18.3| 73.0| 6.0

### Wideband Performance

7.5 Vdc, TA = 25°C, CW
.
*Frequency
MHz
.
* | **Pin
W
.
* | **Gps
dB
.
* | **ηD
%
.
* | **Pout
W
.
*

\---|---|---|---|---

136-174| 0.19| 15.5| 60.0| 6.0

440-5202| 0.15| 16.3| 65.0| 6.4

760-8703| 0.20| 15.2| 58.5| 6.7

### Ruggedness, 520 MHz

**Frequency

MHz
.
* | **Signal Type** | **VSWR** | **Pin
W
.
* | **Test
Voltage
.
* | **Result**

\---|---|---|---|---|---

5201| CW| > 65:1

at all Phase

Angles | 0.12

3 dB

Overdrive| 10.8| No

Device

Degradation

1\\. Measured in 520 MHz narrowband test circuit.

2\\. Measured in 440-520 MHz UHF broadband reference circuit.

3\\. Measured in 760-870 MHz UHF broadband reference circuit.

AFT05MS006NT1中文资料参数规格
技术参数

频率 520 MHz

针脚数 2

耗散功率 128 W

输出功率 6 W

增益 18.3 dB

测试电流 100 mA

输入电容Ciss 75pF @7.5VVds

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 125000 mW

额定电压 30 V

电源电压 7.5 V

封装参数

引脚数 3

封装 PLD-1

外形尺寸

封装 PLD-1

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买AFT05MS006NT1
型号: AFT05MS006NT1
制造商: NXP 恩智浦
描述:晶体管, 射频FET, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W

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