AFT21S232SR5

AFT21S232SR5图片1
AFT21S232SR5图片2
AFT21S232SR5图片3
AFT21S232SR5图片4
AFT21S232SR5概述

RF Power Transistor,2110 to 2170MHz, 182W, Typ Gain in dB is 16.7 @ 2110MHz, 28V, LDMOS, SOT1793

Overview

The AFT21S232SR3 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

MoreLess

## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

* NI-780S-2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---

2110 MHz| 16.7| 30.5| 7.2| –35.7| –19

2140 MHz| 17.0| 31.0| 7.1| –35.4| –20

2170 MHz| 17.2| 31.8| 7.0| –34.8| –15

AFT21S232SR5中文资料参数规格
技术参数

频率 2.11 GHz

额定电流 10 µA

无卤素状态 Halogen Free

输出功率 50 W

增益 16.7 dB

测试电流 1.5 A

工作温度Max 225 ℃

工作温度Min -40 ℃

额定电压 65 V

电源电压 28 V

封装参数

引脚数 3

封装 NI-780S

外形尺寸

封装 NI-780S

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买AFT21S232SR5
型号: AFT21S232SR5
制造商: NXP 恩智浦
描述:RF Power Transistor,2110 to 2170MHz, 182W, Typ Gain in dB is 16.7 @ 2110MHz, 28V, LDMOS, SOT1793

锐单商城 - 一站式电子元器件采购平台