AFT09MS007NT1

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AFT09MS007NT1概述

晶体管, 射频FET, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

Overview

The is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common source amplifier applications in handheld radio equipment.

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## Features

* Characterized for Operation from 136 to 941 MHz

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Integrated ESD Protection

* Integrated Stability Enhancements

* Wideband — Full Power Across the Band

* Exceptional Thermal Performance

* Extreme Ruggedness

* High Linearity for: TETRA, SSB

* RoHS Compliant

* In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7-inch Reel.

* This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.

**Typical Applications**

* Output Stage VHF Band Handheld Radio

* Output Stage UHF Band Handheld Radio

* Output Stage for 700-800 MHz Handheld Radio

## Features RF Performance Tables

### 870 MHz Narrowband

7.5 Vdc, IDQ = 100 mA, TA = 25°C, CW
.
*Frequency
MHz
.
* | **Gps
dB
.
* | **ηD
%
.
* | **Pout
W
.
*

\---|---|---|---

870| 15.2| 71.0| 7.3

### Wideband Performance

7.5 Vdc, TA = 25°C, CW
.
*Frequency
MHz
.
* | **Pin
W
.
* | **Gps
dB
.
* | **ηD
%
.
* | **Pout
W
.
*

\---|---|---|---|---

136-174| 0.25| 14.6| 69.0| 7.2

350-470| 0.20| 15.6| 60.9| 7.3

450-520| 0.22| 15.4| 56.0| 7.5

760-860| 0.23| 15.1| 48.1| 7.5

### Ruggedness, 870 MHz

**Frequency

MHz
.
* | **Signal Type** | **VSWR** | **Pin
W
.
* | **Test
Voltage
.
* | **Result**

\---|---|---|---|---|---

870| CW| > 65:1

at all Phase

Angles| 0.4

3 dB

Overdrive| 10.8| No

Device

Degradation

AFT09MS007NT1中文资料参数规格
技术参数

频率 870 MHz

额定电流 10 µA

针脚数 2

耗散功率 114 W

输出功率 7.3 W

增益 15.2 dB

测试电流 100 mA

输入电容Ciss 107pF @7.5VVds

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 182000 mW

额定电压 30 V

电源电压 7.5 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 PLD-1

外形尺寸

封装 PLD-1

物理参数

工作温度 -65℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

AFT09MS007NT1引脚图与封装图
AFT09MS007NT1引脚图
AFT09MS007NT1封装图
AFT09MS007NT1封装焊盘图
在线购买AFT09MS007NT1
型号: AFT09MS007NT1
制造商: NXP 恩智浦
描述:晶体管, 射频FET, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

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