RF Power Transistor,2496 to 2690MHz, 100W, Typ Gain in dB is 14.9 @ 2496MHz, 28V, LDMOS, SOT1798
Overview
The 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
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## Features
* Advanced High Performance In-Package Doherty
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
## Features RF Performance Table
### 2600 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
2496 MHz| 14.9| 45.7| 8.0| –28.9
2570 MHz| 15.4| 45.6| 7.9| –30.8
2690 MHz| 15.1| 44.5| 7.8| –33.0
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
AFT26H160-4S4R3 NXP 恩智浦 | 当前型号 | 当前型号 |
MRF8S26120HR3 恩智浦 | 功能相似 | AFT26H160-4S4R3和MRF8S26120HR3的区别 |
MRF6S23100HSR3 恩智浦 | 功能相似 | AFT26H160-4S4R3和MRF6S23100HSR3的区别 |
MRF8S26120HSR3 恩智浦 | 功能相似 | AFT26H160-4S4R3和MRF8S26120HSR3的区别 |