AFT26P100-4WSR3

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AFT26P100-4WSR3概述

RF Power Transistor,2496 to 2690MHz, 87W, Typ Gain in dB is 15.3 @ 2690MHz, 28V, LDMOS, SOT1826

Overview

The and AFT26P100-4WGSR3 22 watt symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Volts, VGSA = 0.4 Vdc, IDQB = 344 mA, Pout = 22 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---

2496 MHz| 15.5| 44.4| 8.0| –32.3| –15

2590 MHz| 16.1| 43.5| 7.8| –34.9| –14

2690 MHz| 15.3| 43.9| 7.4| –35.0| –13

AFT26P100-4WSR3中文资料参数规格
技术参数

频率 2.69 GHz

额定电流 10 µA

无卤素状态 Halogen Free

输出功率 22 W

增益 15.1 dB

测试电流 200 mA

工作温度Max 225 ℃

工作温度Min -40 ℃

额定电压 65 V

电源电压 28 V

封装参数

安装方式 Surface Mount

引脚数 5

封装 NI-780HS-4

外形尺寸

封装 NI-780HS-4

物理参数

重量 2953.3 mg

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买AFT26P100-4WSR3
型号: AFT26P100-4WSR3
制造商: NXP 恩智浦
描述:RF Power Transistor,2496 to 2690MHz, 87W, Typ Gain in dB is 15.3 @ 2690MHz, 28V, LDMOS, SOT1826
替代型号AFT26P100-4WSR3
型号/品牌 代替类型 替代型号对比

AFT26P100-4WSR3

NXP 恩智浦

当前型号

当前型号

MRF8S26060HSR3

恩智浦

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