AFT09S200W02GNR3概述
RF Power Transistor,716 to 960MHz, 200W, Typ Gain in dB is 19.2 @ 960MHz, 28V, LDMOS, SOT1815
RF Mosfet LDMOS 28 V 1.4 A 960MHz 19.2dB 56W OM-780-2 鸥翼形
得捷:
FET RF 70V 960MHZ PLD
艾睿:
Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R
安富利:
Trans MOSFET N-CH 70V 2-Pin OM-780 T/R
RfMW:
RF Power Transistor,716 to 960 MHz, 200 W, Typ Gain in dB is 19.2 @ 960 MHz, 28 V, LDMOS, SOT1815