RF Power Transistor,2496 to 2690MHz, 42W, Typ Gain in dB is 14.2 @ 2690MHz, 28V, LDMOS, SOT1797
Overview
The , AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
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## Features
* Advanced High Performance In-Package Doherty
* Designed for Wide Instantaneous Bandwidth Applications
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction System
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250, 44 mm Tape Width, 13-inch Reel.
## Features RF Performance Table
### 2600 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 100 mA, VGSB = 1.4 Vdc, Pout = 9 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
2620 MHz| 14.9| 48.6| 7.9| –28.4
2655 MHz| 14.6| 48.3| 7.9| –32.6
2690 MHz| 14.2| 47.1| 7.8| –37.3