射频金属氧化物半导体场效应RF MOSFET晶体管 2110-2170 MHz 50 W Avg. 28 V
Overview
The AFT21S220W02SR3 and 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz.
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## Features
* Designed for Wide Instantaneous Bandwidth Applications
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
* Optimized for Doherty Applications
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
## Features RF Performance Table
### 2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
2110 MHz| 18.9| 29.8| 7.2| –34.0| –18
2140 MHz| 19.1| 29.3| 7.1| –34.0| –25
2170 MHz| 19.2| 28.9| 7.0| –34.0| –17