AFT27S010NT1

AFT27S010NT1图片1
AFT27S010NT1图片2
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AFT27S010NT1图片4
AFT27S010NT1概述

晶体管, 射频FET, 65 V, 728 MHz, 3600 MHz, PLD-1.5W

Overview

The 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 100 to 3600 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Universal Broadband Driven Device with Internal RF Feedback

* RoHS Compliant

* In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

## Features RF Performance Tables

### 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.1
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---

728 MHz| 24.3| 25.5| 9.3| –44.0| –12

748 MHz| 24.3| 24.7| 9.4| –43.9| –12

768 MHz| 24.3| 23.8| 9.5| –43.6| –12

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.1
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---

2110 MHz| 21.6| 23.2| 9.1| –42.0| –11

2140 MHz| 21.8| 23.| 9.0| –41.5| –15

2170 MHz| 21.7| 22.6| 8.7| –41.7| –15

### 2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.1
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---

2300 MHz| 21.2| 23.6| 9.0| –40.9| –10

2350 MHz| 21.6| 22.6| 8.6| –40.0| –22

2400 MHz| 20.7| 21.0| 8.3| –40.1| –9

### 2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.1
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---

2500 MHz| 19.6| 22.0| 9.8| –44.8| –7

2600 MHz| 21.0| 22.7| 9.4| –41.4| –15

2700 MHz| 19.6| 21.2| 8.9| –39.7| –5

### 3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.1
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---

3400 MHz| 14.7| 15.8| 9.0| –44.9| –7

3500 MHz| 16.0| 16.8| 9.0| –44.9| –8

3600 MHz| 16.0| 17.4| 8.6| –44.2| –4

1\\. All data measured in fixture with device soldered to heat sink.

AFT27S010NT1中文资料参数规格
技术参数

频率 2.17 GHz

额定电流 10 µA

针脚数 2

漏源极电压Vds 65 V

输出功率 1.26 W

增益 21.7 dB

测试电流 90 mA

工作温度Max 150 ℃

工作温度Min -40 ℃

额定电压 65 V

电源电压 28 V

封装参数

引脚数 3

封装 PLD-1

外形尺寸

封装 PLD-1

物理参数

工作温度 -40℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

AFT27S010NT1引脚图与封装图
AFT27S010NT1引脚图
AFT27S010NT1封装图
AFT27S010NT1封装焊盘图
在线购买AFT27S010NT1
型号: AFT27S010NT1
制造商: NXP 恩智浦
描述:晶体管, 射频FET, 65 V, 728 MHz, 3600 MHz, PLD-1.5W

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