射频金属氧化物半导体场效应RF MOSFET晶体管 1805--1880 MHz, 50 W AVG., 28 V
Overview
The 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
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## Features
* High thermal conductivity packaging technology for reduced thermal resistance
* Greater negative gate-source voltage range for improved Class C operation
* Designed for digital predistortion error correction systems
* Optimized for Doherty applications
* RoHS compliant
## Features RF Performance Table
### 1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---|---
1805 MHz| 17.1| 33.3| 7.1| –33.6| –14
1840 MHz| 17.5| 33.3| 7.1| –33.6| –16
1880 MHz| 17.6| 33.8| 6.9| –33.7| –11