AO6800

30V,3.4A,双N沟道MOSFET

最大源漏极电压VdsDrain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| 3.4A 源漏极导通电阻RdsDrain-Source On-State Resistance| 88mΩ@ VGS = 2.5V,ID =2A 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.6~1.4V 耗散功率PdPower Dissipation| 1.15W Description & Applications| Dual N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent RDSON, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications 描述与应用| 双N沟道增强型场效应 概述 AO6800采用先进沟道技术，提供优良的RDS（ON），低栅极电荷和操作与栅极电压低至2.5V。这个装置是适合用于作为负载开关或PWM应用