A2T21H410-24SR6

A2T21H410-24SR6概述

RF Power Transistor,2110 to 2170MHz, 316W, Typ Gain in dB is 15.6 @ 2170MHz, 28V, LDMOS, SOT1800

Overview

The 72 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

MoreLess

## Features

* Advanced High Performance In-Package Doherty

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Table

### 2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 600 mA, VGSB = 0.4 Vdc, Pout = 72 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

2110 MHz| 15.7| 49.1| 7.9| –34.0

2140 MHz| 15.7| 49.0| 7.8| –33.6

2170 MHz| 15.6| 48.9| 7.6| –32.1

A2T21H410-24SR6中文资料参数规格
技术参数

频率 2.17 GHz

输出功率 72 W

增益 15.6 dB

测试电流 600 mA

额定电压 65 V

电源电压 28 V

封装参数

封装 NI-1230-4LS2L

外形尺寸

封装 NI-1230-4LS2L

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买A2T21H410-24SR6
型号: A2T21H410-24SR6
制造商: NXP 恩智浦
描述:RF Power Transistor,2110 to 2170MHz, 316W, Typ Gain in dB is 15.6 @ 2170MHz, 28V, LDMOS, SOT1800

锐单商城 - 一站式电子元器件采购平台