RF Power Transistor,2110 to 2170MHz, 301W, Typ Gain in dB is 16.2 @ 2140MHz, 28V, LDMOS, SOT1800
Overview
The 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
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## Features
* Advanced High Performance In-Package Doherty
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* RoHS Compliant
* In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
## Features RF Performance Table
### 2100 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
2110 MHz| 16.2| 51.6| 7.9| –28.5
2140 MHz| 16.2| 51.8| 7.9| –28.8
2170 MHz| 16.1| 50.9| 7.9| –29.5