A2I20H060GNR1

A2I20H060GNR1图片1
A2I20H060GNR1概述

Amplifier,1800 to 2200MHz, 63W, Typ Gain in dB is 28.4 @ 1840MHz, 28V, LDMOS, SOT1722

Overview

The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

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## Features

* Advanced High Performance In-Package Doherty

* On-Chip Matching 50 Ohm Input, DC Blocked

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Tables

### 1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.65 Vdc, VGS2B = 1.3 Vdc, Pout = 12 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

1805 MHz| 28.5| 42.7| –37.4

1840 MHz| 28.4| 43.8| –37.8

1880 MHz| 28.1| 43.1| –34.7

### 2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.65 Vdc, VGS2B = 1.3 Vdc, Pout = 12 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

2110 MHz| 27.8| 42.3| –36.0

2140 MHz| 27.5| 42.2| –38.3

2170 MHz| 27.3| 42.2| –37.7

A2I20H060GNR1中文资料参数规格
技术参数

频率 1.84 GHz

输出功率 12 W

增益 28.9 dB

测试电流 24 mA

工作温度Max 225 ℃

工作温度Min -40 ℃

额定电压 65 V

封装参数

引脚数 17

封装 TO-270-15

外形尺寸

封装 TO-270-15

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买A2I20H060GNR1
型号: A2I20H060GNR1
制造商: NXP 恩智浦
描述:Amplifier,1800 to 2200MHz, 63W, Typ Gain in dB is 28.4 @ 1840MHz, 28V, LDMOS, SOT1722

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