A2I25D025GNR1

A2I25D025GNR1图片1
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A2I25D025GNR1概述

Amplifier,2100 to 2900MHz, 24W, Typ Gain in dB is 32.5 @ 2690MHz, 28V, LDMOS, SOT1730

Overview

The A2I25D025N wideband integrated circuit is designed with on-chip matching that makes it usable from 2100 to 2900 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

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## Features

* On-Chip Matching 50 Ohm Input, DC Blocked

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Table

### 2300-2690 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A+B = 56 mA, IDQ2A+B = 136 mA, Pout = 3.2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

2300 MHz| 32.0| 19.0| –46.7

2350 MHz| 31.8| 19.0| –47.1

2400 MHz| 31.7| 19.1| –47.5

2496 MHz| 31.7| 19.3| –47.3

2600 MHz| 32.0| 19.5| –47.1

2690 MHz| 32.5| 20.0| –46.8

A2I25D025GNR1中文资料参数规格
技术参数

频率 2.69 GHz

输出功率 3.2 W

增益 31.9 dB

测试电流 59 mA

工作温度Max 225 ℃

工作温度Min -40 ℃

额定电压 65 V

封装参数

安装方式 Surface Mount

引脚数 17

封装 TO-270-17

外形尺寸

封装 TO-270-17

物理参数

重量 598.1 mg

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

数据手册

在线购买A2I25D025GNR1
型号: A2I25D025GNR1
制造商: NXP 恩智浦
描述:Amplifier,2100 to 2900MHz, 24W, Typ Gain in dB is 32.5 @ 2690MHz, 28V, LDMOS, SOT1730

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