A2T18H160-24SR3

A2T18H160-24SR3概述

RF Power Transistor,1805 to 1880MHz, 126W, Typ Gain in dB is 17.9 @ 1805MHz, 28V, LDMOS, SOT1799

Overview

The 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Table

### 1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.65 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

1805 MHz| 17.9| 49.9| 7.7| –32.0

1840 MHz| 17.8| 49.3| 7.7| –33.8

1880 MHz| 17.8| 50.2| 7.8| –34.7

A2T18H160-24SR3中文资料参数规格
技术参数

频率 1.81 GHz

输出功率 28 W

增益 17.9 dB

测试电流 400 mA

额定电压 65 V

电源电压 28 V

封装参数

封装 NI-780S-4L2L

外形尺寸

封装 NI-780S-4L2L

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买A2T18H160-24SR3
型号: A2T18H160-24SR3
制造商: NXP 恩智浦
描述:RF Power Transistor,1805 to 1880MHz, 126W, Typ Gain in dB is 17.9 @ 1805MHz, 28V, LDMOS, SOT1799

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