RF Power Transistor,1805 to 1880MHz, 280W, Typ Gain in dB is 18.7 @ 1880MHz, 28V, LDMOS, SOT1817
Overview
The 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.
MoreLess
## Features
* Designed for Wide Instantaneous Bandwidth Applications
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
* Optimized for Doherty Applications
* RoHS compliant
## Features RF Performance Table
### 1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---|---
1805 MHz| 18.1| 33.1| 6.9| –34.7| –15
1840 MHz| 18.5| 33.5| 7.0| –35.1| –23
1880 MHz| 18.7| 34.4| 6.8| –34.4| –12