AU5517DR2

AU5517DR2图片1
AU5517DR2概述

双路运算跨导放大器 Dual Operational Transconductance Amplifier

The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications. Constant impedance of the buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the change of offset voltage due to a burst in the bias current IABC, hence eliminating the audible noise that could otherwise be heard in high quality audio applications.

Features

•Constant Impedance Buffers

•Excellent Matching Between Amplifiers

•Linearizing Diodes

•High Output Signal-to-Noise Ratio

•Pb−Free Packages are Available
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AU5517DR2中文资料参数规格
技术参数

耗散功率 1125 mW

工作温度Max 125 ℃

工作温度Min -40 ℃

封装参数

安装方式 Surface Mount

封装 SOIC-16

外形尺寸

封装 SOIC-16

其他

产品生命周期 Unknown

包装方式 Tape

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买AU5517DR2
型号: AU5517DR2
制造商: ON Semiconductor 安森美
描述:双路运算跨导放大器 Dual Operational Transconductance Amplifier
替代型号AU5517DR2
型号/品牌 代替类型 替代型号对比

AU5517DR2

ON Semiconductor 安森美

当前型号

当前型号

NE5517DR2G

安森美

类似代替

AU5517DR2和NE5517DR2G的区别

AU5517DR2G

安森美

类似代替

AU5517DR2和AU5517DR2G的区别

NE5517D

安森美

类似代替

AU5517DR2和NE5517D的区别

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