A2I25H060NR1

A2I25H060NR1图片1
A2I25H060NR1图片2
A2I25H060NR1概述

Amplifier,2300 to 2690MHz, 52W, Typ Gain in dB is 27.5 @ 2590MHz, 28V, LDMOS, SOT1730

Overview

The A2I25H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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## Features

* Advanced High Performance In-Package Doherty

* On-Chip Matching 50 Ohm Input, DC Blocked

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Tables

### 2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A = 26 mA, IDQ2A = 163 mA, VGS1B = 1.7 Vdc, VGS2B = 1.3 Vdc, Pout = 10.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

2496 MHz| 27.1| 40.9| –31.5

2590 MHz| 27.5| 40.9| –34.0

2690 MHz| 27.1| 39.4| –34.7

### 2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1A = 28 mA, IDQ2A = 177 mA, VGS1B = 1.8 Vdc, VGS2B = 1.3 Vdc, Pout = 10.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

2300 MHz| 26.7| 38.9| –33.7

2350 MHz| 27.0| 38.9| –34.8

2400 MHz| 27.1| 39.0| –34.7

A2I25H060NR1中文资料参数规格
技术参数

频率 2.59 GHz

输出功率 10.5 W

增益 26.1 dB

测试电流 26 mA

工作温度Max 225 ℃

工作温度Min -40 ℃

额定电压 65 V

封装参数

安装方式 Surface Mount

引脚数 19

封装 TO-270-17

外形尺寸

封装 TO-270-17

物理参数

重量 1580.2 mg

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

数据手册

在线购买A2I25H060NR1
型号: A2I25H060NR1
制造商: NXP 恩智浦
描述:Amplifier,2300 to 2690MHz, 52W, Typ Gain in dB is 27.5 @ 2590MHz, 28V, LDMOS, SOT1730

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