A2T27S020GNR1

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V

Overview

The A2T27S020NR1 and 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.

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## Features

* Greater negative gate-source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* Universal broadband driver

* RoHS compliant

## Features RF Performance Tables

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 20.8| 20.9| 9.4| –44.6| –9

1840 MHz| 21.1| 20.9| 9.3| –45.6| –16

1880 MHz| 20.7| 20.6| 9.1| –45.5| –13

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2110 MHz| 19.1| 19.8| 9.1| –45.4| –10

2140 MHz| 19.6| 19.6| 9.0| –45.3| –14

2170 MHz| 19.4| 19.6| 8.8| –44.5| –12

### 2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2575 MHz| 17.2| 19.4| 9.3| –46.4| –8

2605 MHz| 17.8| 19.5| 9.0| –44.5| –10

2635 MHz| 17.2| 19.4| 8.7| –43.4| –7