A2I35H060GNR1

A2I35H060GNR1图片1
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A2I35H060GNR1概述

Amplifier,3400 to 3800MHz, 48W, Typ Gain in dB is 24 @ 3500MHz, 28V, LDMOS, SOT1730

Overview

The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 3400 to 3800 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

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## Features

* Advanced High Performance In-Package Doherty

* On-Chip Matching 50 Ohm Input, DC Blocked

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Table

### 3500 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A = 56 mA, IDQ2A = 141 mA, VGS1B = 1.6 Vdc, VGS2B = 1.3 Vdc, Pout = 10 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

3400 MHz| 24.0| 32.5| –33.4

3500 MHz| 24.0| 32.4| –37.0

3600 MHz| 23.7| 31.3| –39.0

A2I35H060GNR1中文资料参数规格
技术参数

增益 24 dB

工作温度Max 225 ℃

工作温度Min -40 ℃

封装参数

引脚数 19

封装 TO-270

外形尺寸

封装 TO-270

物理参数

重量 598.1 mg

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

数据手册

在线购买A2I35H060GNR1
型号: A2I35H060GNR1
制造商: NXP 恩智浦
描述:Amplifier,3400 to 3800MHz, 48W, Typ Gain in dB is 24 @ 3500MHz, 28V, LDMOS, SOT1730

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