A2I20D020GNR1

A2I20D020GNR1图片1
A2I20D020GNR1图片2
A2I20D020GNR1概述

Amplifier,1400 to 2200MHz, 16W, Typ Gain in dB is 31 @ 1800MHz, 28V, LDMOS, SOT1730

Overview

The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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## Features

* Extremely Wide RF Bandwidth

* RF Decoupled Drain Pins Reduce Overall Board Space

* On-Chip Matching 50 Ohm Input, DC Blocked

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* RoHS Compliant

## Features RF Performance Table

### 1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A+B = 32 mA, IDQ2A+B = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

1800 MHz| 31.0| 19.7| –44.3

1900 MHz| 31.0| 21.7| –45.0

2000 MHz| 31.1| 22.1| –45.2

2100 MHz| 31.4| 21.1| –45.2

2200 MHz| 32.0| 19.6| –44.8

A2I20D020GNR1中文资料参数规格
技术参数

增益 31 dB

工作温度Max 225 ℃

工作温度Min -40 ℃

封装参数

引脚数 19

封装 TO-270

外形尺寸

封装 TO-270

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买A2I20D020GNR1
型号: A2I20D020GNR1
制造商: NXP 恩智浦
描述:Amplifier,1400 to 2200MHz, 16W, Typ Gain in dB is 31 @ 1800MHz, 28V, LDMOS, SOT1730

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