AIHD10N60RATMA1概述
IGBT 晶体管 DISCRETES
Summary of Features:
-
.
-
Optimized V CEsat and V F for low conduction losses
-
.
-
Smooth switching performance leading to low EMI levels
-
.
-
Very tight parameter distribution
-
.
-
Operating range of 1 to 20kHz
-
.
-
Maximum junction temperature 175°C
-
.
-
Short circuit capability of 5µs
-
.
-
Best-in-Class current versus package size performance
-
.
-
Pb-free lead plating; ROHS compliant for PG-TO-252: solder temperature 260°C, MSL1
AIHD10N60RATMA1中文资料参数规格 技术参数
击穿电压集电极-发射极 600 V
额定功率Max 150 W
耗散功率Max 150 W
封装参数
安装方式 Surface Mount
封装 TO-252-3
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Piezo injection
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
在线购买AIHD10N60RATMA1 型号: AIHD10N60RATMA1
描述:IGBT 晶体管 DISCRETES