A2T23H200W23SR6

A2T23H200W23SR6概述

Airfast RF Power LDMOS Transistor, 2300-2400MHz, 51W Avg., 28V

Overview

The A2T23H200W23S 51 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

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## Features

* Advanced high performance in-package Doherty

* Designed for wide instantaneous bandwidth applications

* Greater negative gate-source voltage range for improved Class C operation

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for digital predistortion error correction systems

* RoHS compliant

## Features RF Performance Table

### 2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 51 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

2300 MHz| 15.5| 50.7| 7.7| –33.4

2350 MHz| 15.6| 50.6| 7.6| –35.2

2400 MHz| 15.5| 50.4| 7.4| –35.6

A2T23H200W23SR6中文资料参数规格
技术参数

频率 2.3GHz ~ 2.4GHz

输出功率 51 W

增益 15.5 dB

测试电流 500 mA

工作温度Max 150 ℃

工作温度Min -40 ℃

额定电压 65 V

封装参数

引脚数 6

封装 ACP-1230S-4L2S

外形尺寸

封装 ACP-1230S-4L2S

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买A2T23H200W23SR6
型号: A2T23H200W23SR6
制造商: NXP 恩智浦
描述:Airfast RF Power LDMOS Transistor, 2300-2400MHz, 51W Avg., 28V

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