AFBR-S4N44C013

光电二极管

The ® is a silicon photo multiplier SiPM array used for ultra-sensitive precision measurement of single photons.The active area is 3.72 × 3.72 mm2. High packing density of the single chip is achieved using through-silicon-via TSV technology. Larger areas can be covered by tiling multiple AFBR-S4N44C013 arrays almost without any edge losses. The passivation layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.

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High PDE of more than 55% at 420 nm

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High fill factors

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Excellent SPTR and CRT

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Excellent uniformity of breakdown voltage, 180 mV 3 sigma

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Excellent uniformity of gain

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With TSV technology 4-side tilable

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Size 3.88 × 3.88 mm2

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Cell pitch 30 × 30 µm2

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Highly transparent glass protection layer