DDR / DDR2 （对于内存模块）内存SPD DDR/DDR2 For memory module SPD Memory
●Description
BR34E02FVT-W is 256×8 bit Electrically Erasable PROM Based on Serial Presence Detect
●Features
・256×8 bit architecture serial EEPROM
・Wide operating voltage range: 1.7V-3.6V
・Two-wire serial interface
・High reliability connection using Au pads and Au wires
・Self-Timed Erase and Write Cycle
・Page Write Function 16byte
・Write Protect Mode
Settable Reversible Write Protect Function: 00h-7Fh
Write Protect 1 Onetime Rom : 00h-7Fh
Write Protect 2 Hardwire WP PIN : 00h-FFh
・Low Power consumption
Write at 1.7V : 0.4mA typ.
Read at 1.7V : 0.1mAtyp.
Standby at 1.7V : 0.1μAtyp.
・DATA security
Write protect feature WP pin Inhibit to WRITE at low VCC
・Compact package: TSSOP-B8, VSON008X2030
・High reliability fine pattern CMOS technology
・Rewriting possible up to 1,000,000 times
・Data retention: 40 years
・Noise reduction Filtered inputs in SCL / SDA
・Initial data FFh at all addresses
