单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
单电阻器数字,
得捷:
TRANS 2NPN PREBIAS 0.25W SOT363
立创商城:
2个NPN-预偏置 100mA 50V
欧时:
Infineon BCR129SH6327XTSA1 双 NPN 数字晶体管, Vce=50 V, 10 kΩ, 电阻比:无, 6引脚 SOT-363 SC-88封装
艾睿:
If you are building a digital signal processing device, make sure to use Infineon Technologies&s; NPN BCR129SH6327XTSA1 digital transistor&s;s within your circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363
极性 NPN
耗散功率 250 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 120 @5mA, 5V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 150 MHz
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363-6
长度 2 mm
宽度 1.25 mm
高度 0.8 mm
封装 SOT-363-6
工作温度 -65℃ ~ 150℃
产品生命周期 Last Time Buy
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR129SH6327XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
UMH4NTN 罗姆半导体 | 功能相似 | BCR129SH6327XTSA1和UMH4NTN的区别 |
DDC114TU-7 美台 | 功能相似 | BCR129SH6327XTSA1和DDC114TU-7的区别 |