ON SEMICONDUCTOR BC858CLT1G 单晶体管 双极, 通用, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 100 hFE
是一款NPN通用双极, 设计用于线性和开关应用。该器件设计用于低功耗表面安装应用。
得捷:
TRANS PNP 30V 0.1A SOT23-3
欧时:
ON Semiconductor, BC858CLT1G
立创商城:
PNP 双极晶体管
艾睿:
Design various electronic circuits with this versatile PNP BC858CLT1G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
Allied Electronics:
ON Semi BC858CLT1G PNP Bipolar Transistor; 0.1 A; 30 V; 3-Pin SOT-23
Jameco:
Trans General Purpose BJT PNP 30 Volt 0.1A 3-Pin SOT-23
安富利:
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT PNP 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
TME:
Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23
Verical:
Trans GP BJT PNP 30V 0.1A Automotive 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR BC858CLT1G Bipolar BJT Single Transistor, General Purpose, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 420 hFE
DeviceMart:
TRANS PNP LP 100MA 30V SOT23
Win Source:
TRANS PNP 30V 0.1A SOT23
额定电压DC -30.0 V
额定电流 -100 mA
极性 PNP, P-Channel
耗散功率 300mW
击穿电压集电极-发射极 30.0 V
集电极最大允许电流 0.1A
安装方式 Surface Mount
引脚数 3
封装 SOT-23
封装 SOT-23
产品生命周期 Active
包装方式 Tape & Reel TR, Cut Tape CT
制造应用 工业, 车用, Power Management, Automotive, Industrial, 电源管理
RoHS标准 Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC858CLT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC858CLT3G 安森美 | 类似代替 | BC858CLT1G和BC858CLT3G的区别 |
BC859CLT1G 安森美 | 类似代替 | BC858CLT1G和BC859CLT1G的区别 |
BC857C@215 恩智浦 | 类似代替 | BC858CLT1G和BC857C@215的区别 |