BR34E02FVT-WE2

DDR / DDR2 （对于内存模块）内存SPD DDR/DDR2 For memory module SPD Memory

●Description

BR34E02FVT-W is 256×8 bit Electrically Erasable PROM Based on Serial Presence Detect

●Features

・256×8 bit architecture serial EEPROM

・Wide operating voltage range: 1.7V-3.6V

・Two-wire serial interface

・High reliability connection using Au pads and Au wires

・Self-Timed Erase and Write Cycle

・Page Write Function 16byte

・Write Protect Mode

   Settable Reversible Write Protect Function: 00h-7Fh

   Write Protect 1 Onetime Rom      : 00h-7Fh

   Write Protect 2 Hardwire WP PIN   : 00h-FFh

・Low Power consumption

   Write  at 1.7V :  0.4mA typ.

   Read  at 1.7V :  0.1mAtyp.

   Standby   at 1.7V   :  0.1μAtyp.

・DATA security

  Write protect feature WP pin    Inhibit to WRITE at low VCC

・Compact package: TSSOP-B8, VSON008X2030

・High reliability fine pattern CMOS technology

・Rewriting possible up to 1,000,000 times

・Data retention: 40 years

・Noise reduction Filtered inputs in SCL / SDA  

・Initial data FFh at all addresses