BCR158WE6327XT

BCR158WE6327XT图片1
BCR158WE6327XT概述

SOT-323 PNP 50V 100mA

Thanks to Technologies" PNP digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.

BCR158WE6327XT中文资料参数规格
技术参数

极性 PNP

耗散功率 250 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 200 MHz

耗散功率Max 250 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-323

外形尺寸

封装 SOT-323

其他

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BCR158WE6327XT
型号: BCR158WE6327XT
制造商: Infineon 英飞凌
描述:SOT-323 PNP 50V 100mA

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