ON SEMICONDUCTOR BC817-40LT3G Bipolar BJT Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE 新
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
频率 100 MHz
无卤素状态 Halogen Free
针脚数 3
极性 NPN
耗散功率 225 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 250 @100mA, 1V
额定功率Max 300 mW
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
宽度 1.3 mm
封装 SOT-23-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2016/06/20
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC817-40LT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
SBC817-40LT1G 安森美 | 完全替代 | BC817-40LT3G和SBC817-40LT1G的区别 |
BC817-40LT3 安森美 | 完全替代 | BC817-40LT3G和BC817-40LT3的区别 |
BC817-40LT1G 安森美 | 类似代替 | BC817-40LT3G和BC817-40LT1G的区别 |