BC847BE6327HTSA1

BC847 系列 NPN 45 V 100 mA 表面贴装 硅 AF 晶体管 - SOT-23-3

小信号 NPN ，

得捷:
TRANS NPN 45V 0.1A SOT23

欧时:
Infineon BC847BE6327HTSA1 , NPN 晶体管, 100 mA, Vce=50 V, HFE:110, 3引脚 SOT-23封装

e络盟:
单晶体管 双极, NPN, 45 V, 250 MHz, 330 mW, 100 mA, 200 hFE

艾睿:
Compared to other transistors, the NPN BC847BE6327HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

Chip1Stop:
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

Newark:
# INFINEON  BC847BE6327HTSA1  Bipolar BJT Single Transistor, NPN, 45 V, 250 MHz, 330 mW, 100 mA, 200

Win Source:
TRANS NPN 45V 0.1A SOT-23