BC857BLT3G

通用晶体管 General Purpose Transistors

Bipolar BJT Transistor PNP 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 TO-236

得捷:
TRANS PNP 45V 0.1A SOT23-3

立创商城:
BC857BLT3G

贸泽:
Bipolar Transistors - BJT 100mA 50V PNP

艾睿:
Implement this versatile PNP BC857BLT3G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 45V 0.1A Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  BC857BLT3G  Bipolar BJT Single Transistor, PNP, 45 V, 100 MHz, 225 mW, -100 mA, 290 hFE