BC857B RF

PNP 晶体管，Taiwan Semiconductor### 双极晶体管，Taiwan Semiconductor

小信号 PNP ，

### 双极晶体管，Taiwan Semiconductor

欧时:
Taiwan Semiconductor BC857B RF , PNP 晶体管, 100 mA, Vce=45 V, HFE:220, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - BJT TRANSISTOR 200mW

艾睿:
Jump-start your electronic circuit design with this versatile PNP BC857B RF GP BJT from Taiwan Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
Transistor PNP 45V 100mA 250mW SOT23

Verical:
Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R