SOT-23 NPN 30V 0.1A
- 双极 BJT - 单 NPN 30 V 100 mA 250MHz 330 mW 表面贴装型 SOT-23-3
得捷:
TRANS NPN 30V 0.1A SOT23
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN BC849BE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.
Verical:
Trans GP BJT NPN 30V 0.1A 330mW Automotive 3-Pin SOT-23 T/R
频率 250 MHz
额定电压DC 30.0 V
额定电流 100 mA
极性 NPN
耗散功率 0.33 W
击穿电压集电极-发射极 30 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 5V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 For AF input stages and driver applications
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC849BE6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BC848BE6327HTSA1 英飞凌 | 完全替代 | BC849BE6327HTSA1和BC848BE6327HTSA1的区别 |
BC848BL3E6327XTMA1 英飞凌 | 类似代替 | BC849BE6327HTSA1和BC848BL3E6327XTMA1的区别 |
BC848BE6433HTMA1 英飞凌 | 类似代替 | BC849BE6327HTSA1和BC848BE6433HTMA1的区别 |