BC858AWT1G

单晶体管 双极, PNP, -30 V, 100 MHz, 150 mW, -100 mA, 125 hFE

Bipolar BJT Transistor PNP 30V 100mA 100MHz 150mW Surface Mount SC-70-3 SOT323

得捷:
TRANS PNP 30V 0.1A SC70-3

立创商城:
BC858AWT1G

e络盟:
单晶体管 双极, PNP, -30 V, 100 MHz, 150 mW, -100 mA, 125 hFE

艾睿:
The versatility of this PNP BC858AWT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT PNP 30V 0.1A 3-Pin SC-70 T/R

Verical:
Trans GP BJT PNP 30V 0.1A Automotive 3-Pin SC-70 T/R

Win Source:
TRANS PNP 30V 0.1A SOT-323