500mW,BZV55C 系列,Taiwan Semiconductor小信号 500mW 密封玻璃齐纳二极管 电压容差为 5% 表面安装外壳:微型 MELF JEDEC DO-213AC ### 齐纳二极管,Taiwan Semiconductor
齐纳 500mW,BZV55C 系列,
小信号 500mW 密封玻璃
电压容差为 5%
表面安装外壳:微型 MELF JEDEC DO-213AC
### 齐纳二极管,Taiwan Semiconductor
欧时:
Taiwan Semiconductor BZV55C12 L1 单路 齐纳二极管, 12V 5% 500 mW, 2引脚 MiniMELF封装
艾睿:
Now you can operate a diode in its reverse breakdown region by using a voltage regulator BZV55C12 L1 zener diode from Taiwan Semiconductor. Its maximum leakage current is 0.1 μA. Its test current is 5 mA. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This zener diode has an operating temperature range of -65 °C to 175 °C. This zener device has a nominal voltage of 12 V and a voltage tolerance of 5%. It is made in a single configuration.
Allied Electronics:
Taiwan Semi BZV55C12 L1 Zener Diode, 12V 5% 500 mW SMT 2-Pin MiniMELF
Verical:
Zener Diode Single 12V 5% 20Ohm 500mW 2-Pin Mini-MELF T/R
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BZV55C12 L1 Taiwan Semiconductor 台湾半导体 | 当前型号 | 当前型号 |
BZV55-C13,115 恩智浦 | 功能相似 | BZV55C12 L1和BZV55-C13,115的区别 |
BZV55C12-TP 美微科 | 功能相似 | BZV55C12 L1和BZV55C12-TP的区别 |
BZV55-C12,115* 恩智浦 | 功能相似 | BZV55C12 L1和BZV55-C12,115*的区别 |