500mW,BZV55C 系列,Taiwan Semiconductor小信号 500mW 密封玻璃齐纳二极管 电压容差为 5% 表面安装外壳:微型 MELF JEDEC DO-213AC ### 齐纳二极管,Taiwan Semiconductor
齐纳 500mW,BZV55C 系列,
小信号 500mW 密封玻璃
电压容差为 5%
表面安装外壳:微型 MELF JEDEC DO-213AC
### 齐纳二极管,Taiwan Semiconductor
欧时:
### 齐纳二极管 500mW,BZV55C 系列,Taiwan Semiconductor小信号 500mW 密封玻璃齐纳二极管 电压容差为 5% 表面安装外壳:微型 MELF JEDEC DO-213AC ### 齐纳二极管,Taiwan Semiconductor
艾睿:
If you need a diode to operate in the reverse breakdown region then use a voltage regulator BZV55C13 L1 zener diode from Taiwan Semiconductor. Its maximum power dissipation is 500 mW. Its maximum leakage current is 0.1 μA. Its test current is 5 mA. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This zener device has a nominal voltage of 13 V and a voltage tolerance of 6%. It is made in a single configuration. This zener diode has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Allied Electronics:
Taiwan Semi BZV55C13 L1 Zener Diode, 13V 5% 500 mW SMT 2-Pin MiniMELF
Verical:
Zener Diode Single 13V 5% 26Ohm 500mW 2-Pin Mini-MELF T/R
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BZV55C13 L1 Taiwan Semiconductor 台湾半导体 | 当前型号 | 当前型号 |
BZV55-C13,115 恩智浦 | 功能相似 | BZV55C13 L1和BZV55-C13,115的区别 |
BZV55C13-TP 美微科 | 功能相似 | BZV55C13 L1和BZV55C13-TP的区别 |
BZV55-C13,135 恩智浦 | 功能相似 | BZV55C13 L1和BZV55-C13,135的区别 |