BCR129E6327HTSA1

1个NPN-预偏置 100mA 50V

- 双极 BJT - 单，预偏置 NPN - 预偏压 50 V 100 mA 150 MHz 200 mW 表面贴装型 SOT-23-3

得捷:
TRANS PREBIAS NPN 200MW SOT23-3

立创商城:
1个NPN-预偏置 100mA 50V

贸泽:
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS

艾睿:
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN BCR129E6327HTSA1 digital transistor from Infineon Technologies, ideal for any digital signal processing circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

Verical:
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R