ON SEMICONDUCTOR BCW30LT1G 单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE
The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC -32.0 V
额定电流 -100 mA
针脚数 3
极性 PNP
耗散功率 225 mW
击穿电压集电极-发射极 32 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 215 @2mA, 5V
额定功率Max 225 mW
直流电流增益hFE 215
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2016/06/20
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BCW30LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BCW30LT1 安森美 | 完全替代 | BCW30LT1G和BCW30LT1的区别 |
SBCW30LT1G 安森美 | 类似代替 | BCW30LT1G和SBCW30LT1G的区别 |
BCW30@215 恩智浦 | 类似代替 | BCW30LT1G和BCW30@215的区别 |