1个PNP-预偏置 100mA 50V
The PNP digital transistor from Technologies is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
额定电压DC -50.0 V
额定电流 -100 mA
极性 PNP
耗散功率 0.2 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 30 @5mA, 5V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 200 MHz
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
产品生命周期 End of Life
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR183E6433HTMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
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