BCR183E6433HTMA1

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BCR183E6433HTMA1概述

1个PNP-预偏置 100mA 50V

The PNP digital transistor from Technologies is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

BCR183E6433HTMA1中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

极性 PNP

耗散功率 0.2 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 30 @5mA, 5V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 200 MHz

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 End of Life

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买BCR183E6433HTMA1
型号: BCR183E6433HTMA1
描述:1个PNP-预偏置 100mA 50V
替代型号BCR183E6433HTMA1
型号/品牌 代替类型 替代型号对比

BCR183E6433HTMA1

Infineon 英飞凌

当前型号

当前型号

BCR183E6327HTSA1

英飞凌

完全替代

BCR183E6433HTMA1和BCR183E6327HTSA1的区别

UNR211100L

松下

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