单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
双电阻器数字,
Infineon 的一系列双极性结点晶体,配有集成电阻器,允许直接从数字来源驱动,无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。
得捷:
TRANS PREBIAS PNP 50V SOT23-3
立创商城:
1个PNP-预偏置 100mA 50V
欧时:
Infineon BCR183E6327HTSA1 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 3引脚 SOT-23封装
艾睿:
Thanks to Infineon Technologies&s; PNP BCR183E6327HTSA1 digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R
Verical:
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS PREBIAS PNP 0.2W SOT23-3
额定电压DC -50.0 V
额定电流 -100 mA
极性 PNP
耗散功率 0.2 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 30 @5mA, 5V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 200 MHz
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.9 mm
封装 SOT-23-3
产品生命周期 Last Time Buy
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR183E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCR183E6433HTMA1 英飞凌 | 完全替代 | BCR183E6327HTSA1和BCR183E6433HTMA1的区别 |