BCR108E6433HTMA1

双极晶体管 - 预偏置 NPN Silicon Digital TRANSISTOR

- 双极 BJT - 单，预偏置 NPN - 预偏压 表面贴装型 SOT-23-3

得捷:
TRANS PREBIAS NPN 200MW SOT23-3

贸泽:
双极晶体管 - 预偏置 NPN Silicon Digital TRANSISTOR

艾睿:
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN BCR108E6433HTMA1 digital transistor from Infineon Technologies is your solution. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PREBIAS NPN 200MW SOT23-3 / Pre-Biased Bipolar Transistor BJT NPN - Pre-Biased 50 V 100 mA 170 MHz 200 mW Surface Mount PG-SOT23