BCX70JE6327HTSA1

Infineon BCX70JE6327HTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:20, 3引脚 SOT-23封装

小信号 NPN ，

得捷:
TRANS NPN 45V 0.1A SOT23

欧时:
Infineon BCX70JE6327HTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:20, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

艾睿:
The versatility of this NPN BCX70JE6327HTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS NPN 45V 0.1A SOT-23