Infineon BCX70JE6327HTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:20, 3引脚 SOT-23封装
小信号 NPN ,
得捷:
TRANS NPN 45V 0.1A SOT23
欧时:
Infineon BCX70JE6327HTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:20, 3引脚 SOT-23封装
贸泽:
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
艾睿:
The versatility of this NPN BCX70JE6327HTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
安富利:
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R
Verical:
Trans GP BJT NPN 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS NPN 45V 0.1A SOT-23
频率 250 MHz
额定电压DC 45.0 V
额定电流 100 mA
极性 NPN
耗散功率 330 mW
增益频宽积 250 MHz
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 250 @2mA, 5V
最大电流放大倍数hFE 460
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.9 mm
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 For AF input stages and driver applications
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCX70JE6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCX70JE6433HTMA1 英飞凌 | 完全替代 | BCX70JE6327HTSA1和BCX70JE6433HTMA1的区别 |