双极晶体管 - 双极结型晶体管BJT AF TRANSISTOR
- 双极 BJT - 单 NPN 30 V 100 mA 250MHz 250 mW 表面贴装型 PG-SOT323-3
得捷:
TRANS NPN 30V 0.1A SOT323
贸泽:
双极晶体管 - 双极结型晶体管BJT AF TRANSISTOR
艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN BC849CWH6327XTSA1 BJT, developed by Infineon Technologies, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.
Verical:
Trans GP BJT NPN 30V 0.1A 250mW Automotive 3-Pin SOT-323 T/R
频率 250 MHz
极性 NPN
耗散功率 330 mW
击穿电压集电极-发射极 30 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
最大电流放大倍数hFE 800
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
封装 SOT-323-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 For AF input stages and driver applications
RoHS标准 RoHS Compliant
含铅标准 无铅
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC849CWH6327XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BC848CWH6327XTSA1 英飞凌 | 完全替代 | BC849CWH6327XTSA1和BC848CWH6327XTSA1的区别 |
BC849CWE6327HTSA1 英飞凌 | 完全替代 | BC849CWH6327XTSA1和BC849CWE6327HTSA1的区别 |
BC848CWE6327BTSA1 英飞凌 | 完全替代 | BC849CWH6327XTSA1和BC848CWE6327BTSA1的区别 |