BC847B RF

NPN 晶体管，Taiwan Semiconductor### 双极晶体管，Taiwan Semiconductor

小信号 NPN ，

欧时:
Taiwan Semiconductor BC847B RF , NPN 晶体管, 100 mA, Vce=45 V, HFE:200, 100 MHz, 3引脚 SOT-23封装

艾睿:
Compared to other transistors, the NPN BC847B RF general purpose bipolar junction transistor, developed by Taiwan Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Allied Electronics:
Taiwan Semiconductor BC847B RF NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin SOT-23